Design and Testing of 1 kV H-bridge Power Electronics Building Block Based on 1.7 kV SiC MOSFET Module-Reference-Cited by-同舟云学术

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Design and Testing of 1 kV H-bridge Power Electronics Building Block Based on 1.7 kV SiC MOSFET Module

Published:2018-05 Issue: Volume: Page:
ISSN:
Container-title:2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia)
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Author:

Wang Jun,Burgos Rolando,Boroyevich Dushan,Liu Zeng

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8476150/8502705/08507368.pdf?arnumber=8507368

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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