Parasitic Effects from Cooling of GaN Power Transistors - Impact on Switching Losses and Common-Mode Currents-Reference-Cited by-同舟云学术

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Parasitic Effects from Cooling of GaN Power Transistors - Impact on Switching Losses and Common-Mode Currents

Published:2022-05-15 Issue: Volume: Page:
ISSN:
Container-title:2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia)
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Author:

Weiler Pelle¹,Bokmans Bart¹,Lemmen Erik¹,Vermulst Bas¹,Wijnands Korneel²

Affiliation:

1. Electromechanics and Power Electronics, Eindhoven University of Technology,Eindhoven,Netherlands

2. Electrical Energy Systems, Eindhoven University of Technology,Eindhoven,Netherlands

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9806820/9806821/09806879.pdf?arnumber=9806879

Reference11 articles.

1. Thermal evaluation of chip-scale packaged gallium nitride transistors;reusch;IEEE Journal of Emerging and Selected Topics in Power Electronics,2016

2. GaN-on-Si Power Technology: Devices and Applications

3. Influence of current sensing equipment and dc-link capacitor on the performance of a low inductive sic switching cell;sewergin;PCIM Europe digital days 2020 International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management,2020

4. Design limitations of heat spreaders for gallium nitride power modules;weiler;PCIM Europe digital days 2020 International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management,2020

5. Measurement Techniques for High-Speed GaN E-HEMTs;GaN Systems,0

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