Heterogeneous Integration by Collective Die-To-Wafer Bonding-Reference-Cited by-同舟云学术

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Heterogeneous Integration by Collective Die-To-Wafer Bonding

Published:2018-10 Issue: Volume: Page:
ISSN:
Container-title:2018 International Wafer Level Packaging Conference (IWLPC)
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Author:

Uhrmann Thomas,Burggraf Jurgen,Eibelhuber Martin

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8552558/8573258/08573296.pdf?arnumber=8573296

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low Temperature Wafer Level Hybrid Bonding Enabled by Advanced SiCN and Surface Activation;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

2. A Review on Hybrid Bonding Interconnection and Its Characterization;IEEE Nanotechnology Magazine;2024-04

3. Temporary Direct Bonding by Low Temperature Deposited SiO₂ for Chiplet Applications;ACS Applied Electronic Materials;2024-04-01

4. A Collective Die to Wafer Bonding Approach Based on Surface-Activated Aluminum–Aluminum Thermocompression Bonding;IEEE Transactions on Components, Packaging and Manufacturing Technology;2024-03

5. Integration of plasma dicing in the collective die to wafer hybrid bonding process;2023 IEEE 25th Electronics Packaging Technology Conference (EPTC);2023-12-05

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