A 29.6 dBm 29-GHz Power Amplifier for Satellite and 5G Communications Using 0.15-μm GaAs p-HEMT Technology-Reference-Cited by-同舟云学术

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A 29.6 dBm 29-GHz Power Amplifier for Satellite and 5G Communications Using 0.15-μm GaAs p-HEMT Technology

Published:2018-11 Issue: Volume: Page:
ISSN:
Container-title:2018 Asia-Pacific Microwave Conference (APMC)
language:
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Author:

Huang Ian,Yen Shao-Ting,Chao Wei-Pang,Tsai Jeng-Han,Alshehri Abdulelah,Almalki Mazen,Sayed Abdulhamid,Huang Tian-Wei

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8599618/8617121/08617649.pdf?arnumber=8617649

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 28 GHz GaAs pHEMT High-Efficiency Power Amplifier Using Multi-Section Transmission-Line Power Combining/Matching Technique;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

2. Millimeter-Wave GaAs Ultra-Wideband Medium Power Amplifier and Broadband High-Power Power Amplifier for 5G/6G Applications;IEEE Journal on Emerging and Selected Topics in Circuits and Systems;2024-03

3. A 0.13μm GaAs HEMT Reconfigurable Balance-to-Doherty Stacked Power Amplifier for 5G mm-wave Applications;2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME);2023-06-18

4. A Ka-band Power Amplifier with On-chip Power Detector in 0.15 μm GaAs pHEMT Technology;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2022-12-31

5. Recent Progress and Future Development in Satellite Communication;Highlights in Science, Engineering and Technology;2022-12-27

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