Low Threshold $1.55\ \mu\mathrm{m}$-Band Quantum Dot Laser Diode with InP(311)B Substrate
Author:
Affiliation:
1. National Institute of Information and Communications Technology,Koganei, Tokyo,Japan,184-8795
Funder
New Energy and Industrial Technology Development Organization (NEDO)
Ministry of Internal Affairs
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9943281/9943297/09943339.pdf?arnumber=9943339
Reference5 articles.
1. Fabrication of ultra-high-density InAs quantum dots using the strain-compensation technique
2. Extremely stable temperature characteristics of 1550-nm band, p-doped, highly stacked quantum-dot laser diodes
3. Temperature insensitivity of emission wavelength of highly-stacked quantum dot laser fabricated on InP(311)B substrate with Bi atoms irradiation;akahane;CLEO-PR2022,2022
4. Widely tunable narrow-linewidth 1.5 μm light source based on a monolithically integrated quantum dot laser array
5. Integrated Hybrid Wavelength-Tunable III–V/Silicon Transmitter Based on a Ring-Assisted Mach–Zehnder Interferometer Modulator
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