Wide Wavelength Range Emission from InAs/GaSb Type-II Superlattice Grown by MOVPE
Author:
Affiliation:
1. University of Miyazaki,Department of Applied Physics and Electronic Engineering,Miyazaki city,Miyazaki,Japan,889–2192
2. Graduate School of Information Science and Technology, Hokkaido University,Kita-ku,Sapporo,Japan,060–0814
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9943281/9943297/09943409.pdf?arnumber=9943409
Reference5 articles.
1. Crystal Growth and Evaluation of III-V(Sb) Materials for Mid Infrared Emitter and Detector
2. InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs
3. Successful Application of the 8-band ${\mbi{k}}{\cdot}$${\mbi{p}}$ Theory to Optical Properties of Highly Strained In(Ga)As/InGaAs Quantum Wells With Strong Conduction-Valence Band Coupling
4. Design of strain compensated InGaAs/GaAsSb type-II quantum well structures for mid-infrared photodiodes
5. Optical gas sensing: a review
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