Well layer thickness dependence on threshold current of SCH-MQW laser diode grown on InP/Si substrate
Author:
Affiliation:
1. Sophia University,Department of Engineering and Applied Sciences,Tokyo,Japan,102-8554
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9943281/9943297/09943316.pdf?arnumber=9943316
Reference5 articles.
1. Lasing characteristics of $1.2\ \mu\mathrm{m}$ GaInAsP LD on InP/Si substrate;kallarasan;Physica Status Solidi A,2018
2. Novel integration method for III–V semiconductor devices on silicon platform
3. Low threshold current of GaInAsP laser grown on directly bonded InP/Si substrate;sugiyama;The 22nd OptoElectronics and Communications Conference Sands Expo and Convention Centre,2017
4. Growth of GaInAs/InP MQW using MOVPE on directly-bonded InP/Si substrate
5. Recent Progress in Heterogeneous III-V-on-Silicon Photonic Integration
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