A 3.4-4.1GHz Broadband GaN Doherty Power Amplifier Module for 5G massive-MIMO Base-Stations
Author:
Affiliation:
1. Information Technology R&D Center, Mitsubishi Electric Corporation,Kamakura,Kanagawa,JAPAN
2. High Frequency & Optical Device Works, Mitsubishi Electric Corporation,Itami,Hyogo,JAPAN
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9999720/9999721/09999926.pdf?arnumber=9999926
Reference12 articles.
1. GaN Technology for 5G Application
2. A compact, 42% PAE, two-stage, LDMOS Doherty PA Module for Massive MIMO applications
3. A Highly Linear GaN MMIC Doherty Power Amplifier Based on Phase Mismatch Induced AM–PM Compensation
4. Breaking the Bandwidth Limit: A Review of Broadband Doherty Power Amplifier Design for 5G
5. 3–3.6-GHz Wideband GaN Doherty Power Amplifier Exploiting Output Compensation Stages
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A 3.6GHz Highly Efficient Dual-Driver Doherty Power Amplifier;2024 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR);2024-01-21
2. An Arbitrary Order IMD Suppression Method for Dual-Input Power Amplifiers by Controlling the Phase Differences of Dual-Band Signals;2023 Asia-Pacific Microwave Conference (APMC);2023-12-05
3. Continuous Quasi-Load Insensitive Class-E Mode for Wideband Doherty Power Amplifiers;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11
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