Broadband SPST Switches in 250-nm GaN HEMT Process
Author:
Affiliation:
1. Graduate Institute of Communication Engineering, National Taiwan University,Taipei,Taiwan (R.O.C.),10617
Funder
Ministry of Science and Technology, Taiwan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9999720/9999721/09999952.pdf?arnumber=9999952
Reference11 articles.
1. A wideband power amplifier MMIC utilizing GaN on SiC HEMT technology;campbell;IEEE CSICS,2008
2. 2–12 GHz high-power GaN MMIC switch utilizing stacked-FET circuits;hangai;2019 EuMC,0
3. A G-Band on-off-Keying Low-Power Transmitter and Receiver for Interconnect Systems in 65-nm CMOS
4. Analytical Design of Millimeter-Wave 100-nm GaN-on-Si MMIC Switches Using FET-Based Resonators and Coupling Matrix Method
5. Coupling-Inductor-Based Hybrid mm-Wave CMOS SPST Switch
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. AlGaN/GaN Distributed Schottky Barrier Single-Pole Single-Throw Millimeter-Wave Switches;IEEE Access;2023
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