Investigation of acceleration factors of the HV-H3TRB test on 3.3kV SiC SBDs
Author:
Affiliation:
1. Mitsubishi Electric Corporation,Fukuoka,Japan
2. Mitsubishi Electric Europe B.V.,Germany
3. Siemens Mobility GMBH,Germany
4. University of Bremen,IALB,Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10264177/10264226/10264596.pdf?arnumber=10264596
Reference18 articles.
1. Comparison of the H3TRB Performance of Silicon and Silicon Carbide Power Modules
2. Lifetime estimation model of HVIGBT considering humidity;kitajima;PCIM Europe 2017 International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management,2017
3. Humidity Robustness of 3.3kV SiC-MOSFETs for Traction Applications – Compared to Standard Silicon IGBTs in Identical Packaging;hanf;Int Conf on Silicon Carbide and Related Materials,2022
4. Acceleration of temperature humidity bias (THB) testing on IGBT modules by high bias levels
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1. Power Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced Degradation;Solid State Phenomena;2024-08-23
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