Deadtime optimization eliminating snap-off of 3.3kV SiC MOSFET bodydiodes-Reference-Cited by-同舟云学术

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Deadtime optimization eliminating snap-off of 3.3kV SiC MOSFET bodydiodes

Published:2023-09-04 Issue: Volume: Page:
ISSN:
Container-title:2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)
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Author:

März Andreas¹,Schönewolf Stefan¹,Nagel Andreas¹,Rauh Michael²,Bakran Mark-M.²

Affiliation:

1. Siemens Mobility GmbH,Nuremberg,Germany,90441

2. University of Bayreuth,Center of Energy Technology,Department of Mechatronics,Bayreuth,Germany,95447

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10264177/10264226/10264563.pdf?arnumber=10264563

Reference13 articles.

1. Recovery Behavior of SiC-MOSFET Body Diodes;liu;ISPSD,2023

2. Reverse Recovery Behavior in SiC-MOSFETs: Characterization and Modelling;hürner;PCIM Europe,2023

3. Impact of Operating a SiC-MOSFETs Body Diode Beyond its SOA;rauh;PCIM Europe,2023

4. Impact of Threshold Voltage Instabilities of SiC MOSFETs on the Methodology of Power Cycling Tests;kempiak;PCIM Europe,2022

5. 3.3 kV All SiC MOSFET Module with Schottky Barrier Diode Embedded SiC MOSFET;kono;PCIM Europe,2021

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