Design Consideration and Demonstration of Dual-Active Bridge Converter Using 13-kV SiC-MOSFETs Packaged in TO-268
Author:
Affiliation:
1. University of Tsukuba,Tsukuba,Japan,305-8573
Funder
National Institute of Advanced Industrial Science and Technology
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10264177/10264226/10264433.pdf?arnumber=10264433
Reference10 articles.
1. Analytical Switching Loss Modeling Based on Datasheet Parameters for mosfets in a Half-Bridge
2. A surface-mountable 1.2 cc compact molded package suitable for 13 kV SiC MOSFET;michikoshi;PCIM-Europe 2018,2018
3. High-Efficiency DAB Converter Using Switching Sequences and Burst Mode
4. 99% Efficient 10 kV SiC-Based 7 kV/400 V DC Transformer for Future Data Centers
5. 7.2-kV Single-Stage Solid-State Transformer Based on the Current-Fed Series Resonant Converter and 15-kV SiC mosfets
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