A model-based approach for prognostics of power semiconductor modules-Reference-Cited by-同舟云学术

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A model-based approach for prognostics of power semiconductor modules

Published:2023-09-04 Issue: Volume: Page:
ISSN:
Container-title:2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)
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Author:

Vulli Aleksi¹,Schlottig Gerd²,Orkisz Michał³,Firla Marcin³,Bianda Enea²

Affiliation:

1. ABB Drives,Helsinki,Finland

2. ABB Corporate Research,Baden-Dättwil,Switzerland

3. ABB Corporate Technology Center,Kraków,Poland

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10264177/10264226/10264278.pdf?arnumber=10264278

Reference28 articles.

1. Bayesian remaining useful lifetime prediction of thermally aged power MOSFETs

2. Prognostics of power MOSFETs under thermal stress accelerated aging using data-driven and model-based methodologies;celaya;Proceedings of the Annual Conference of the Prognostics and Health Management Society 2011 (PHM),2011

3. Data-driven Prognostics based on Evolving Fuzzy Degradation Models for Power Semiconductor Devices

4. Machine Learning Based Prognostics for Predicting Remaining Useful Life of IGBT – NASA IGBT Accelerated Ageing Case Study

5. Auxiliary Particle Filtering-Based Estimation of Remaining Useful Life of IGBT

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An automated method for creating compact dynamic thermal models for in-situ prognostics of power electronics and power LED packages;2023 29th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC);2023-09-27

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