Relation between UIS withstanding capability and gate leakage currents for high voltage GaN-HEMTs-Reference-Cited by-同舟云学术

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Relation between UIS withstanding capability and gate leakage currents for high voltage GaN-HEMTs

Published:2017-05 Issue: Volume: Page:
ISSN:
Container-title:2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)
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Author:

Naka Toshiyuki,Saito Wataru

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7981281/7988866/07988922.pdf?arnumber=7988922

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Unclamped-Inductive-Switching Behaviors of p-GaN HEMTs at Cryogenic Temperature;IEEE Transactions on Power Electronics;2022-10

2. Investigations on Unclamped-Inductive-Switching Behaviors of p-GaN HEMTs at Cryogenic Temperature;2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2022-05-22

3. Failure Analysis of 200V p-GaN HEMT under Unclamped Inductive Switching Conditions;2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2021-08-25

4. Charge storage impact on input capacitance in p-GaN gate AlGaN/GaN power high-electron-mobility transistors;Journal of Physics D: Applied Physics;2020-06-04

5. Investigations on electrical parameters degradation and recovery of E-mode GaN high-electron mobility transistors under repetitive unclamped inductive switching stresses based on low-frequency noise;Semiconductor Science and Technology;2020-02-01

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