Analysis of anisotropic ionization coefficient in bulk 4H-SiC with full-band Monte Carlo simulation-Reference-Cited by-同舟云学术

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Analysis of anisotropic ionization coefficient in bulk 4H-SiC with full-band Monte Carlo simulation

Published:2017-09 Issue: Volume: Page:
ISSN:
Container-title:2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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Author:

Fujita R.,Konaga K.,Ueoka Y.,Kamakura Y.,Mori N.,Kotani T.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8068290/8085242/08085321.pdf?arnumber=8085321

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical study on high-field carrier transport and impact ionization coefficients in 4H-SiC;Materials Science in Semiconductor Processing;2024-04

2. Analysis of uniaxial stress impact on drift velocity of 4H-SiC by full-band Monte Carlo simulation;Solid-State Electronics;2023-01

3. Simulation analysis of high-field carrier transport in wide-bandgap semiconductors considering tunable band structures and scattering processes;Journal of Applied Physics;2022-06-14

4. Full band Monte Carlo analysis of the uniaxial stress impact on 4H-SiC high energy transport;2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2021-09-27

5. Theoretical analysis of band structure effects on impact ionization coefficients in wide-bandgap semiconductors;Applied Physics Express;2020-03-30

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