Reduction of the Turn-Off Overvoltage in an Active Full-Bridge Rectifier Stage by Paralleling GaN-HEMTs
Author:
Affiliation:
1. TECHNISCHE UNIVERSITÄT BERLIN,Chair of Power Electronics,Berlin,Germany,10587
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9570185/9570186/09570492.pdf?arnumber=9570492
Reference10 articles.
1. GaN Systems, GN001 Application Note - An Introduction to GaN Enhancement-mode HEMTs,2020
2. Paralleling GaN E-HEMTs in 10kW–100kW systems
3. Experimental Evaluation and Analysis of Dynamic On-Resistance in Hard- and Soft-switching Operation of a GaN GIT;geng;PCIM Europe digital days 2020 International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management,2020
4. Electroquasistatic and Magnetoquasistatic Equations and Fields
5. Skin effects models for transmission line structures using generic SPICE circuit simulators
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Power Loop Inductance Optimization Strategy for Eliminating Turn-off Switching Surge for GaN-HEMT Switching Device;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04
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