200 GHz Low Noise Amplifiers in 250 nm InP HBT Technology
Author:
Affiliation:
1. University of California,Department of Electrical and Computer Engineering,Santa Barbara,USA
2. Sungkyunkwan University,Department of Electrical and Computer Engineering,South Korea
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9783221/9783226/09784010.pdf?arnumber=9784010
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A 185-GHz Low-Noise Amplifier Using a 35-nm InP HEMT Process;IEEE Microwave and Wireless Technology Letters;2024-05
2. A 220–320 GHz High Image Rejection Sideband Separating Receiver for Space-Borne Observatories;IEEE Transactions on Terahertz Science and Technology;2024-03
3. Comparative Performance of 100–200 GHz Wideband Transceivers: CMOS vs Compound Semiconductors;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
4. A 202 GHz Link Using Planar Transceiver Modules;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
5. A Circuit Designer's Perspective on Transistor Modelling Challenges for 6G, Fiberoptics, and Quantum Computing ICs;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
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