Temperature-Insensitive pulse and 120℃ CW Operation of 1550nm-Band p-doped InAs/InGaAlAs Quantum Dot Lasers on InP(311)B Substrate
Author:
Affiliation:
1. Waseda University,Faculty of Science and Engineering,Tokyo,Japan,169-8555
2. National Institute of Information and Communications Technology (NICT),Tokyo,Japan,184-8795
Funder
National Institute of Information and Communications Technology
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10115459/10115461/10116485.pdf?arnumber=10116485
Reference9 articles.
1. Extremely stable temperature characteristics of 1550-nm band, p-doped, highly stacked quantum-dot laser diodes
2. Temperature stability of static and dynamic properties of 155 µm quantum dot lasers
3. Highly stacked quantum-dot laser fabricated using a strain compensation technique
4. Gain characteristics and femto-second optical pulse response of 1550nm-band multi-stacked QD-SOA grown on InP(311)B substrate
5. Experimental investigation of chirp properties induced by signal amplification in quantum-dot semiconductor optical amplifiers
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