Fully Integrated III-V-on-Silicon Multi-Port DFB Laser Comb Source for 100 GHz DWDM
Author:
Affiliation:
1. SCINTIL Photonics,Grenoble,France,38040
2. University of Toronto,Department of Electrical and Computer Engineering,Toronto,Canada,M5S 3G4
3. CEA-Leti,Grenoble,France,38000
Funder
Bpifrance
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10115459/10115461/10117231.pdf?arnumber=10117231
Reference9 articles.
1. WDM Source Based on High-Power, Efficient 1280-nm DFB Lasers for Terabit Interconnect Technologies
2. Back-Side-on-BOX Heterogeneously Integrated III-V-on-Silicon O-Band Distributed Feedback Lasers
3. Multi-wavelength 128 Gbit s−1 λ −1 PAM4 optical transmission enabled by a 100 GHz quantum dot mode-locked optical frequency comb
4. High-Efficiency Quantum Dot Lasers as Comb Sources for DWDM Applications
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