Low dark current backside-illuminated photodiode for 200 Gb/s operation with 40 μm wide alignment tolerance-Reference-Cited by-同舟云学术

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Low dark current backside-illuminated photodiode for 200 Gb/s operation with 40 μm wide alignment tolerance

Published:2023-03 Issue: Volume: Page:
ISSN:
Container-title:2023 Optical Fiber Communications Conference and Exhibition (OFC)
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Author:

Takemura Ryota¹,Tsubouchi Daiki¹,Ohno Akihito¹,Yamauchi Yasuhiro¹

Affiliation:

1. Mitsubishi Electric Corporation,High Frequency and Optical Device Works,Itami,Hyogo,Japan,664-8641

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10115459/10115461/10116305.pdf?arnumber=10116305

Reference5 articles.

1. The balanced photodetector buried with semi-insulating InP

2. Broadband 145GHz Photodetector Module Targeting 200GBaud Applications

3. 25Gbps × 4ch photodiode array with high responsivity for 100Gbps Ethernet

4. Inverted p-down pin photodiode exceeding 70-GHz bandwidth featuring low operating bias voltage of 2 V

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1. 1 × 4 Integrated Microlenses High-Rate Photodetector Array for Optical Communication Transmission;IEEE Journal of Quantum Electronics;2024-06

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