In<sub>0.52</sub>Al<sub>0.48</sub>As Based Single Photon Avalanche Diodes with Multiple M-Layers for High-Efficiency and Fast Temporal Responses-Reference-Cited by-同舟云学术

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In_0.52Al_0.48As Based Single Photon Avalanche Diodes with Multiple M-Layers for High-Efficiency and Fast Temporal Responses

Published:2023-03 Issue: Volume: Page:
ISSN:
Container-title:2023 Optical Fiber Communications Conference and Exhibition (OFC)
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Author:

Wang Po-Shun¹,Hung Yu-Ying²,Fang Tzu-Yuan¹,Kuo Chin-He¹,Huang Yuan-Hung¹,Chang Yan-Chieh¹,Lee Yi-Shan¹,Shi Jin-Wei¹

Affiliation:

1. National Central University,Department of Electrical Engineering,Taoyuan,Tawian,320

2. National Central University,College of Science Joint Science Program,Taoyuan,Tawian,320

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10115459/10115461/10117284.pdf?arnumber=10117284

Reference10 articles.

1. InGaAs/InP single-photon detectors with 60% detection efficiency at 1550 nm

2. Gigahertz-gated InGaAs/InP single-photon detector with detection efficiency exceeding 55% at 1550?nm;comandar;Journal of Applied Physics,2015

3. Low-Noise InGaAs/InP Single-Photon Avalanche Diodes for Fiber-Based and Free-Space Applications

4. Design and Performance of an InGaAs–InP Single-Photon Avalanche Diode Detector

5. Avalanche Photodiodes With Composite Charge-Layers for Low Dark Current, High-Speed, and High-Power Performance

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