190 GHz Bandwidth Modified Uni-Traveling Carrier Photodiodes with High Saturation Power
Author:
Affiliation:
1. Tsinghua University,Beijing National Research Center for Information Science and Technology (BNRist),Department of Electronic Engineering,Beijing,China,100084
Funder
National Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10115459/10115461/10116997.pdf?arnumber=10116997
Reference7 articles.
1. Transient and steady‐state electron transport properties of GaAs and InP
2. 170 GHz uni-traveling carrier photodiodes for InP-based photonic integrated circuits
3. Millimeter-wave imaging using photonics-based noise source
4. D-Band MUTC Photodiodes with Flat Frequency Response;chao;IEEE Journal of Selected Topics in Quantum Electronics,2021
5. High-power flip-chip bonded modified uni-traveling carrier photodiodes with? 2.6 dBm RF output power at 160 GHz;morgan;2018 IEEE Photonics Conf,2018
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