A Fully Coupled Multi-Physics Model to Simulate Phase Change Memory Operations in Ge-rich Ge2Sb2Te5 Alloys-Reference-Cited by-同舟云学术

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A Fully Coupled Multi-Physics Model to Simulate Phase Change Memory Operations in Ge-rich Ge₂Sb₂Te₅ Alloys

Published:2023-09-27 Issue: Volume: Page:
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Container-title:2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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Author:

Miquel R.¹,Cabout T.¹,Cueto O.²,Sklénard B.²,Plapp M.³

Affiliation:

1. STMicroelectronics,Crolles,France,38926

2. Univ. Grenoble Alpes,CEA, Leti,Grenoble,France,F-38000

3. Institut Polytechnique de Paris,Laboratoire de Physique de la Matière Condensée, Ecole Polytechnique, CNRS,Palaiseau,France,91120

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10319472/10319477/10319485.pdf?arnumber=10319485

Reference17 articles.

1. Reference Correlations for the Thermal Conductivity of Liquid Bismuth, Cobalt, Germanium, and Silicon

2. First‐Principles Calculation of Transport and Thermoelectric Coefficients in Liquid Ge ₂ Sb ₂ Te ₅

3. Electrical Conductivity Discontinuity at Melt in Phase Change Memory

4. Temperature‐Dependent Thermal Conductivity and Interfacial Resistance of Ge‐Rich Ge ₂ Sb ₂ Te ₅ Films and Multilayers

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