Quantum Modeling of Semiconductors Leakage Currents Induced by Defects-Reference-Cited by-同舟云学术

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Quantum Modeling of Semiconductors Leakage Currents Induced by Defects

Published:2023-09-27 Issue: Volume: Page:
ISSN:
Container-title:2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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Author:

Jay A.¹,Mesnard C.¹,Nicholson I.²,Helleboid R.²,Mugny G.²,Rideau D.²,Goiffon V.³,Samos L. Martin⁴,Richard N.⁵,Hémeryck A.¹

Affiliation:

1. Université de Toulouse, CNRS,LAAS CNRS,Toulouse,France

2. ST Microelectronics,Crolles,France

3. ISAE Supaéro,Toulouse,France

4. CNR IOM,Trieste,Italie

5. Bruyères-le-Châtel,CEA/DIF,France

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10319472/10319477/10319491.pdf?arnumber=10319491

Reference16 articles.

1. Phonons and related crystal properties from density-functional perturbation theory

2. Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices: a DFT based Study

3. Theoretical and experimental aspects of the thermal dependence of electron capture coefficients

4. Tutorial: Defects in semiconductors—Combining experiment and theory

5. Point Defects in Semiconductors II

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