Modeling Oxide Regrowth During Selective Etching in Vertical 3D NAND Structures
Author:
Affiliation:
1. Institute for Microelectronics, TU Wien,Christian Doppler Laboratory for Multi-Scale Process Modeling of Semiconductor Devices and Sensors,Vienna,Austria,1040
2. St Ives,Silvaco Europe Ltd.,Cambridgeshire,United Kingdom,PE27 5JL
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10319472/10319477/10319506.pdf?arnumber=10319506
Reference12 articles.
1. Vertical cell array using TCAT(Terabit Cell Array Transistor) technology for ultra high density NAND flash memory;jang;Proc IEEE VLSI Technol Symp,2009
2. Redeposition mechanism on silicon oxide layers during selective etching process in 3D NAND manufacture
3. Level Set Methods and Dynamic Implicit Surfaces;ohser;Appl Math Ser,2003
4. Process Improvements for 7th Generation 1Tb Quad-Level Cell 3D NAND Flash Memory in Mass Production
5. Selective wet etching of Si3N4/SiO2 in phosphoric acid with the addition of fluoride and silicic compounds
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3