Variability in Si/SiGe and Si/SiO<sub>2</sub> Spin Qubits due to Interfacial Disorder-Reference-Cited by-同舟云学术

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Variability in Si/SiGe and Si/SiO₂ Spin Qubits due to Interfacial Disorder

Published:2023-09-27 Issue: Volume: Page:
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Container-title:2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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Author:

Cvitkovich L.¹,Sklénard B.²,Waldhör D.¹,Li J.²,Wilhelmer C.³,Veste G.²,Niquet Y.-M.⁴,Grasser T.¹

Affiliation:

1. Technische Universität Wien,Institute for Microelectronics,Vienna,Austria,1040

2. Univ. Grenoble Alpes,CEA, LETI,Grenoble,France,F-38000

3. Christian Doppler Laboratory for Single-Defect Spectroscopy in Semiconductor Devices,Vienna,Austria,1040

4. Univ. Grenoble Alpes,CEA, IRIG-MEM-L Sim,Grenoble,France,F-38000

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10319472/10319477/10319618.pdf?arnumber=10319618

Reference26 articles.

1. Dynamic modeling of Si(100) thermal oxidation: Oxidation mechanisms and realistic amorphous interface generation;cvitkovich;Applied Surface Science,2023

2. Variability of Electron and Hole Spin Qubits Due to Interface Roughness and Charge Traps

3. Separable dual-space Gaussian pseudopotentials

4. CP2K: An electronic structure and molecular dynamics software package - Quickstep: Efficient and accurate electronic structure calculations

5. All-electrical manipulation of silicon spin qubits with tunable spin-valley mixing

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