Self-turn-on-free 1200V scaled CSTBT™ driven by 5V gate voltage with wide SOA-Reference-Cited by-同舟云学术

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Self-turn-on-free 1200V scaled CSTBT™ driven by 5V gate voltage with wide SOA

Published:2021-05-30 Issue: Volume: Page:
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Container-title:2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Nishi Koichi,Ze Chen,Tanaka Koji,Eguchi Keisuke,Miyazaki Takamasa,Furukawa Akihiko

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9452126/9452187/09452212.pdf?arnumber=9452212

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Robust reverse bias safe operating area and improved electrical performance in 3300 V non-proportionally scaled insulated gate bipolar transistors;Japanese Journal of Applied Physics;2024-01-19

2. Turn-off switching voltage surge analysis with dependence on IGBT cell design;Japanese Journal of Applied Physics;2024-01-04

3. A 15V operated Shallow Trench IGBT(ST-IGBT) fabricated by low temperature process and optimized for 12inch wafers;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

4. Ultrathin Vertical Gate Oxide for Trench Power Device Technology;2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2022-03-06

5. Scaling Design Effects on Surface Buffer IGBT Characteristics;IEEE Journal of the Electron Devices Society;2021

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