Threshold Voltage Engineering in Al2O3/AlGaN/GaN MISHEMTs with Thin Barrier Layer: MIS-gate Charge Control and High Threshold Voltage Achievement-Reference-Cited by-同舟云学术

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Threshold Voltage Engineering in Al2O3/AlGaN/GaN MISHEMTs with Thin Barrier Layer: MIS-gate Charge Control and High Threshold Voltage Achievement

Published:2021-05-30 Issue: Volume: Page:
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Container-title:2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

He Liang,Li Liuan,Zhang Jialin,Ni Yiqiang,Zhang Jinwei,Liu Zhenxing,Wu Qianshu,Liu Yang

Funder

Research and Development

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9452126/9452187/09452234.pdf?arnumber=9452234

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MISHEMT intrinsic voltage gain under multiple channel output characteristics;Semiconductor Science and Technology;2023-09-22

2. Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K;2023 37th Symposium on Microelectronics Technology and Devices (SBMicro);2023-08-28

3. Experimental Analysis of MISHEMT Multiple Conductions from 200K to 450K;2022 36th Symposium on Microelectronics Technology (SBMICRO);2022-08-22

4. Normally-OFF AlGaN/GaN MIS-HEMTs With Low R_ON and V_th Hysteresis by Functioning In-situ SiN_x in Regrowth Process;IEEE Electron Device Letters;2022-04

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