Simulation of Metallic Quantum Gate Structures with Advanced Volume Integral Equation Solver
Author:
Affiliation:
1. School of Electrical and Computer Engineering, Purdue University,West Lafayette,IN,USA,47907
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10114672/10114681/10114744.pdf?arnumber=10114744
Reference6 articles.
1. Fast O(N log N) Algorithm for Generating Rank-Minimized H2-Representation of Electrically Large Volume Integral Equations
2. Qubit relaxation from evanescent-wave Johnson noise
3. Fidelity benchmarks for two-qubit gates in silicon
4. Accuracy Directly Controlled Fast Direct Solution of General ${\mathcal{ H}}^{2}$ -Matrices and Its Application to Solving Electrodynamic Volume Integral Equations
5. Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices
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