X-band GaN-HEMT LNA performance versus robustness trade-off
Author:
Affiliation:
1. SELEX Sistemi Integrati SpA, Rome 00131, Italy
2. SESM s.c.a.r.l., Rome 00131, Italy
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/5286913/5295900/05296145.pdf?arnumber=5296145
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. X-band Monolithic GaN HEMT LNA based on Indigenous Process;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03
2. Robustness of GaN on SiC low‐noise amplifiers in common source and cascode configurations for X‐band applications;International Journal of Circuit Theory and Applications;2024-01-27
3. Design and Development of C and X band LNA MMIC’s using Indigenous 0.25um AlGaN/GaN-on-SiC HEMT Technology;2023 IEEE Microwaves, Antennas, and Propagation Conference (MAPCON);2023-12-11
4. A Compact 7-10 GHz GaN Low Noise Amplifier MMIC with Sub 0.3 dB Gain flatness;2023 IEEE 15th International Conference on ASIC (ASICON);2023-10-24
5. A Self-Reconfigurable Highly Linear and Robust X-Band MMIC GaN LNA;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
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