Record-High Memory Window and Robust Retention Anti-Fuse OTP Memory: Electrical and Reliability Characteristics
Author:
Affiliation:
1. National Yang Ming Chiao Tung University,Department of Electrophysics,Hsinchu,Taiwan
2. Taiwan Semiconductor Research Inst. (TSRI),Hsinchu,Taiwan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10183871/10183917/10183943.pdf?arnumber=10183943
Reference9 articles.
1. One Time Programmable Antifuse Memory Based on Bulk Junctionless Transistor
2. Multilevel Anti-Fuse Cells by Progressive Rupturing of the High- $\kappa $ Gate Dielectric in FinFET Technologies
3. Investigation of Two Bits With Multistate Antifuse on nMOS Poly-Silicon Junctionless GAA OTP
4. A Study of Self-Aligned Nitride Erasable OTP Cell by 45-nm CMOS Fully Compatible Process
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