Large-Signal Modeling for Nonlinear Analysis of Experimental Devices in 22nm FDSOI Technology

Author:

Le Quang Huy1,Khoa Huynh Dang1,Nayak Anurag1,Lehmann Steffen2,Zhao Zhixing2,Kampfe Thomas1,Rudolph Matthias3

Affiliation:

1. Fraunhofer IPMS,Center Nanoelectronic Technologies,Dresden,Germany

2. Fab1, GlobalFoundries,Dresden,Germany

3. Brandenburg University of Technology,Ulrich-L.-Rohde Chair of Radio Frequency and Microwave Techniques,Cottbus,Germany

Publisher

IEEE

Reference13 articles.

1. Charge conservative FET modelling using ANNs

2. Artificial Neural Network Model of SOS-MOSFETs Based on Dynamic Large-Signal Measurements

3. Module: tf.keras,0

4. Adam: a method for stochastic optimization;kingma;International Conference on Learning Representations,2015

5. 22FDX® fMAX Optimization through Parasitics Reduction and GM Boost

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. 22-nm FDSOI CMOS Noise Modeling and Analysis in mm-Wave Frequency Range;2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems;2023-01-22

2. Artificial Neural Networks for Power Match Modeling and Verification With a Novel $D$-Band Vector Load—Pull Bench;IEEE Transactions on Microwave Theory and Techniques;2023

3. Effects of Electrodes Layout on Performance of Millimeter-Wave Transistors;IEEE Access;2023

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