A W-Band Up-Conversion Mixer with Integrated LO Frequency Doublers in a 60 nm GaN Technology-Reference-Cited by-同舟云学术

A W-Band Up-Conversion Mixer with Integrated LO Frequency Doublers in a 60 nm GaN Technology

Published:2022-04-03 Issue: Volume: Page:
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Container-title:2021 16th European Microwave Integrated Circuits Conference (EuMIC)
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Author:

Bao Mingquan¹,Malmqvist Robert¹,Jonsson Rolf¹,Hansryd Jonas¹,Andersson Kristoffer¹

Affiliation:

1. Ericsson Research,Ericsson,AB,Sweden

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9783221/9783226/09783229.pdf?arnumber=9783229

Reference14 articles.

1. High power, wideband frequency doubler design using AlGaN/GaN HEMTs and filtering;wong;41st European Microwave Conference,2011

2. A MMIC Frequency Doubler Using AlGaN/GaN HEMT Technology

3. A broadband and high power frequency tripler using 0.5 µm GaN-on-SiC HEMT technology;chou;IEEE International Conference on Communication Problem-Solving (ICCP),2015

4. Comparative noise investigation of high-performance GaAs and GaN millimeter-wave monolithic technologies

5. E/W-band CPW-based amplifier MMICs fabricated in a 60 nm GaN-on-Silicon foundry process;malmqvist;European Microwave integrated circuit conference (EUMIC),2020

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2. Sub-100nm GaN/Si MMIC processes for 6G telecommunications;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16

3. A W-Band Single-Chip Receiver in a 60 nm GaN-on-Silicon Foundry Process;2021 16th European Microwave Integrated Circuits Conference (EuMIC);2022-04-03