Modeling Assisted Room Temperature Operation of Atomic Precision Advanced Manufacturing Devices-Reference-Cited by-同舟云学术

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Modeling Assisted Room Temperature Operation of Atomic Precision Advanced Manufacturing Devices

Published:2020-09-23 Issue: Volume: Page:
ISSN:
Container-title:2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
language:
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Author:

Gao Xujiao,Tracy Lisa A.,Anderson Evan M.,Campbell DeAnna M.,Ivie Jeffrey A.,Lu Tzu-Ming,Mamaluy Denis,Schmucker Scott W.,Misra Shashank

Funder

Research and Development

Sandia National Laboratories

U.S. Department of Energy

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9241573/9241588/09241642.pdf?arnumber=9241642

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2. Electric current paths in a Si:P delta-doped device imaged by nitrogen-vacancy diamond magnetic microscopy;Nanotechnology;2022-10-20

3. Accelerated Lifetime Testing and Analysis of Delta-Doped Silicon Test Structures;IEEE Transactions on Device and Materials Reliability;2022-06

4. Modeling and Assessment of Atomic Precision Advanced Manufacturing (APAM) Enabled Vertical Tunneling Field Effect Transistor;2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2021-09-27

5. Simulation and Modeling of Time-Resolved X-Ray Detector for the Saturn Accelerator;IEEE Transactions on Nuclear Science;2021-07

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