A Single-Stage Low-Noise SiGe HBT Distributed Amplifier with 13 dBm Output Power and 20 dB Gain in D-Band and over 170 GHz Bandwidth-Reference-Cited by-同舟云学术

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A Single-Stage Low-Noise SiGe HBT Distributed Amplifier with 13 dBm Output Power and 20 dB Gain in D-Band and over 170 GHz Bandwidth

Published:2022-09-26 Issue: Volume: Page:
ISSN:
Container-title:2022 17th European Microwave Integrated Circuits Conference (EuMIC)
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Author:

Baeyens Yves¹,Mansha Muhammad Waleed¹,Rucker Holger²

Affiliation:

1. Nokia Bell Labs,New Providence,NJ,USA

2. IHP-Leibniz-Institut für innovative Mikroelektronik,Frankfurt (Oder),Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9923413/9922957/09923462.pdf?arnumber=9923462

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced Accuracy in On-Wafer Noise Figure Measurements at Sub-Terahertz Frequencies;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

2. A 10–230-GHz InP Distributed Amplifier Using Darlington Quadruple-Stacked HBTs;IEEE Microwave and Wireless Technology Letters;2024-06

3. A 53–125 GHz chip to double‐ridge rectangular waveguide transition;Electronics Letters;2024-03

4. Exploring Millimeter-Wave and Terahertz Circuits and Systems With a Novel Multiuser Measurement Facility: Multiuser Terahertz Measurement Facility (THz Lab);IEEE Microwave Magazine;2024-02

5. A 61-187.2-GHz Traveling Wave Push-Push Frequency Doubler in a 130 nm SiGe:C BiCMOS Technology With 101.7% Fractional Bandwidth;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

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