Thermal transient test of GaN HEMT devices
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/7934495/7939302/07939408.pdf?arnumber=7939408
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Thermal Characterization of Power Gallium Nitride Transistor;2023 IEEE 3rd International Conference in Power Engineering Applications (ICPEA);2023-03-06
2. Real-Time of Channel Temperature Monitoring of P-Gan Hemts Based on Gate Leakage Current;2023
3. Breakdown Characteristics Study of III-Nitride/$\beta-\text{Ga}_{2}\mathrm{O}_{3}$ Nano-HEMT as a function of Field-Plate Length & AlN Nucleation Layer Thickness;2022 IEEE Calcutta Conference (CALCON);2022-12-10
4. Study on Thermal Transient Measurement Method and Mechanism of GaN HEMT Power Devices;2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS);2021-12-06
5. Transient Thermal Characterization for GaN HEMTs with p-Type Gate;Transactions of The Japan Institute of Electronics Packaging;2020
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