A Segmented Internally-Matched Class J GaN Power Amplifier for High Duty Cycle C-Band Radars-Reference-Cited by-同舟云学术

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A Segmented Internally-Matched Class J GaN Power Amplifier for High Duty Cycle C-Band Radars

Published:2019-09 Issue: Volume: Page:
ISSN:
Container-title:2019 14th European Microwave Integrated Circuits Conference (EuMIC)
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Author:

Formicone Gabriele,Custer James

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8901248/8909395/08909513.pdf?arnumber=8909513

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. X-Band 100-W High-Voltage GaN Internally Matched FET with Low Gain Compression;IGARSS 2023 - 2023 IEEE International Geoscience and Remote Sensing Symposium;2023-07-16

2. Study of harmonic control power amplifier technology based on improved modeling of bondwire;International Journal of RF and Microwave Computer-Aided Engineering;2022-07-25

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