SiC Double Trench MOSFET with Split Gate and Integrated Schottky Barrier Diode for Ultra-Low Power Loss and Improved Short-Circuit Capability
Author:
Affiliation:
1. University of Electronic Science and Technology of China,State Key Laboratory of Electronic Thin Films and Integrated Devices,Chengdu,China,610054
Funder
China Postdoctoral Science Foundation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx8/9970761/10669734/10669746.pdf?arnumber=10669746
Reference26 articles.
1. Fundamentals of Silicon Carbide Technology
2. Asymmetric 3D tri-gate 4H-SiC MESFETs with a recessed drain drift region
3. High Switching Performance of 1700V, 50A SiC Power MOSFET over Si IGBT/BiMOSFET for Advanced Power Conversion Applications
4. Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules
5. Comparative Investigation of Surge Current Capabilities of Si IGBT and SiC MOSFET for Pulsed Power Application
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