High-Temperature Properties of a Low Dielectric Constant Organic Spin-on Glass for Multilevel Interconnects-Reference-Cited by-同舟云学术

High-Temperature Properties of a Low Dielectric Constant Organic Spin-on Glass for Multilevel Interconnects

Published:2001-10 Issue:10 Volume:55 Page:1347-1351
ISSN:0003-7028
Container-title:Applied Spectroscopy
language:en
Short-container-title:Appl Spectrosc

Author:

Wang C. Y.¹,Shen Z. X.¹,Zheng J. Z.¹

Affiliation:

1. Department of Physics, National University of Singapore, Lower Kent Ridge Road, Singapore 119260 (C.Y.W., Z.X.S.); and R & D Department, Chartered Semiconductor Mfg. Ltd, 60 Woodlands Industrial Park D, Street 2, Singapore 738406 (C.Y.W., J.Z.Z.)

Abstract

In this paper, we report on the thermal properties of a low-dielectric-constant organic spin-on glass, methyl silsesquioxane (MSQ), an important material for semiconductor device fabrication. The compositional and structural changes of this MSQ material, when heated in air and N 2, were investigated in detail with Fourier transform infrared (FT-IR) spectroscopy and thermogravimetric analysis (TGA). MSQ transforms to thermal oxide SiO 2 above 500 °C when heated in air, and it forms oxygen-deficient SiO 2 above 700 °C in N 2. Our results suggest that a cure temperature higher than the current 425 °C is preferred to form films with better cross-linked network structure.

Publisher

SAGE Publications

Subject

Spectroscopy,Instrumentation

Link

http://journals.sagepub.com/doi/pdf/10.1366/0003702011953469

Reference10 articles.

1. Methods And Needs For Low K Material Research

2. Material Characterization Of Methyl Siloxane Sogs

3. Properties of New Low Dielectric Constant Spin-on Silicon Oxide based Polymers

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