Correcting for Oxygen Concentrations in Single-Side Polished Wafers-Reference-Cited by-同舟云学术

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Correcting for Oxygen Concentrations in Single-Side Polished Wafers

Published:1991-01 Issue:1 Volume:45 Page:121-123
ISSN:0003-7028
Container-title:Applied Spectroscopy
language:en
Short-container-title:Appl Spectrosc

Author:

Engelbrecht J. A. A.¹

Affiliation:

1. IBM East Fishkill Facility, Route 52, Hopewell Junction, New York 12533

Publisher

SAGE Publications

Subject

Spectroscopy,Instrumentation

Link

http://journals.sagepub.com/doi/pdf/10.1366/0003702914337830

Reference13 articles.

1. 1986 Annual Book of ASTM Standards (American Society of Testing and Materials, Philadelphia, 1986), Vol. 10.05, F-1 Proposal P 197.

2. Krishnan K., in Proceedings of the Symposium on Defects in Silicon, Bullis W. M. and Kiderling L. C, Eds. (The Electrochemical Society, Pennington, New Jersey, 1983), p. 285.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Molecular Composition and Orientation of Interstitial versus Surface Silicon Oxides for Si(111)/SiO2 and Si(100)/SiO2 Interfaces using FT-IR and X-ray Photoelectron Spectroscopies;Applied Spectroscopy;2003-06

2. Complete Optical Analysis to Obtain the Absorption Coefficient of the Interstitial Oxygen Vibration in Silicon;Applied Spectroscopy;1996-09

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