Optical Spectroscopy Applied to the Study of Plasma Etching-Reference-Cited by-同舟云学术

Optical Spectroscopy Applied to the Study of Plasma Etching

Published:1980-01 Issue:1 Volume:34 Page:31-33
ISSN:0003-7028
Container-title:Applied Spectroscopy
language:en
Short-container-title:Appl Spectrosc

Author:

Frieser R. G.¹,Nogay J.¹

Affiliation:

1. IBM Data Systems Division, East Fishkill, Hopewell Junction, New York 12533

Abstract

The use of an optical spectrographic system in the study of a CF3H plasma process has been investigated. CF3H plasma etch rates of SiO2 are related to emission intensities of spectral lines of compounds identified in the plasma. HF is a definite component when SiO2 is etched with a CF3H plasma. This optical spectrographic system has the potential to control and eventually automate both plasma etch and deposition processes.

Publisher

SAGE Publications

Subject

Spectroscopy,Instrumentation

Link

http://journals.sagepub.com/doi/pdf/10.1366/0003702804730907

Reference9 articles.

1. A Study of the Optical Emission from an rf Plasma during Semiconductor Etching

2. Simple Optical Devices for Detection of Radiofrequency Oxygen Plasma Stripping of Photoresists

3. Plasma etching in integrated circuit manufacture—A review

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4. The Application of ICP Spectroscopy to Model the Chemistry Occurring in Plasma-Etch Reactors: Part I;Applied Spectroscopy;1989-11

5. Dry Etching for Microelectronics-A Bibliography;Dry Etching for Microelectronics;1984