FY08 Annual Report: Amorphous Semiconductors for Gamma Radiation Detection (ASGRAD)-Reference-Cited by-同舟云学术

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FY08 Annual Report: Amorphous Semiconductors for Gamma Radiation Detection (ASGRAD)

Published:2009-02-01 Issue: Volume: Page:
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Author:

Johnson Bradley R.,Riley Brian J.,Crum Jarrod V.,Ryan Joseph V.,Sundaram S. K.,McCloy John S.,Rockett Angus

Publisher

Office of Scientific and Technical Information (OSTI)

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Room temperature semiconductor detectors for nuclear security;Journal of Applied Physics;2019-07-28

2. Synchronous γ (Co60) photons and thermal processing induced insulator metal transition in amorphous chalcogenide As4Se3Te3 composition;Indian Journal of Physics;2017-12-14

3. Simultaneous γ(Co60)-quanta irradiation and isothermal annealing-induced insulator–metal transition in a-As4Se4Te2chalcogenide composition;Radiation Effects and Defects in Solids;2013-11-22

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