Preparation and Electrical Testing of Double Top Gate Graphene Field-Effect Transistor

Abstract

In this paper, we prepare and test a graphene field-effect transistor with two top gates. The Fermi energy level of graphene can be adjusted by applying positive and negative voltages to the two top gates, and N-type and P-type graphene are formed in the channel region, thus inducing a graphene p-n junction. The current model is established using the gradual channel approximation (GCA) method, and the current and p-n junction characteristics of the device were obtained by formula simulations. Based on the principle of p-n junction luminescence, this device with graphene p-n junction is expected to achieve terahertz wave radiation with an appropriate optical resonant cavity.