Author:
Wan Wen-Jian ,Yin Rong ,Tan Zhi-Yong ,Wang Feng ,Han Ying-Jun ,Cao Jun-Cheng ,
Abstract
The material of GaAs/AlGaAs bound-to-continuum terahertz quantum-cascade laser (THz QCL) was grown by gas source molecular beam epitaxy. A THz QCL device was fabricated with semi-insulating surface-plasmon waveguide. Its spectrum and light intensity-current-voltage characteristics were studied. The device emits about 2.95 THz, and yields a maximum temperature of 67 K in pulse mode. In continuous-wave mode, it displays a threshold current density of 230 A/cm2 at 9 K with maximum emitted power of 1.2 mW and lases up to 30 K.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
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