Effects of frequency-dependent surface impedance on the vacuum electronic terahertz sources

Abstract

When the working frequency of vacuum electronic device reaches the terahertz frequency, the ohmic loss has a significant impact on the vacuum electronic device. To study the effect of the ohmic loss on the working characteristic of the vacuum electronic terahertz devices, this paper implements the frequency-dependent surface impedance boundary condition (SIBC) in the 3 dimensional particle in cell code UNIPIC-3D. Conformal mesh is adopted in the code to overcome the staircase error in traditional particle in cell method. By using the surface impedance boundary, we eliminate the need to study the field inside the lossy dielectric objects which require extremely small grid cells for numerical stability. In comparison with constant parameter SIBC, the dispersive SIBC is applicable over a very large frequency bandwidth and over a large range of conductivities. The correctness of the implementation is verified by simulating the lossy resonant cavity and circular waveguide, the simulated power loss is comparable with the theoretical predication. High power vacuum electronic devices of terahertz regime are attracting extensive interests due to their potential applications in science and technologies. The impulse-wave relativistic surface wave oscillator (SWO) and low-voltage continuous-wave planar grating backward wave oscillator (BWO) both made of copper are numerically studied by using UNIPIC-3D and dispersive surface impedance boundary condition. Numerical results show that the strongest field is very close to the slow wave structure where the beam-wave interaction occurs and that terahertz wave generates both in these two devices. The distributed wall loss has a considerable effect on the devices: the output power has a significant decrease and the startup time becomes longer, but the working frequencies of the two devices keep unchanged. To improve the efficiency of relativistic SWO, a resonant reflector is proposed between the diode and the slow wave structure. Numerical results show that the working frequency of the device with a resonant reflector keeps unchanged as the original one, but the output power increases to 60 MW from 41 MW of the original one when the ohmic loss is considered.