Microstructure and thermoelectric property of (Bi1–xTbx)2(Te0.9Se0.1)3 fabricated by high pressure sintering technique

Abstract

Nanocrystalline bulk materials n-type (Bi_1–<i>x</i>Tb<i>_x</i>)₂(Te_0.9Se_0.1)₃ (<i>x</i> = 0, 0.002, 0.004, 0.008) are fabricated by high pressure sintering (HPS) technique. The HPS samples are then annealed for 36 h in a vacuum at 633 K. The phase compositions and crystal structure of HPS sample are analyzed by X-ray diffraction. The microscopic morphology of HPS sample is observed by field-emission scanning electron microscopy. The electric conductivity, Seebeck coefficient, and thermal conductivity of the HPS sample and annealed sample are measured in a temperature range from room temperature to 473 K. The effects of Tb content on crystal structure and thermoelectric properties of the sample are systematically studied. The results show that HPS sample consists of nanoparticles. With the increase of content of Tb, the cell volume increases. Besides, the power factor increases but thermal conductivity decreases through doping Tb, thus the optimal figure of merit (<i>ZT</i>) value increases. The Tb doping amount of <i>x</i> = 0.004 is an optimal doping amount. At this doping amount, the maximum <i>ZT</i> of 0.29 is achieved, which is enhanced by 32% compared with the <i>ZT</i> value of undoped sample. The thermoelectric performance can be improved significantly by annealing. The thermal conductivity of the annealed sample with <i>x</i> = 0.004 is 0.9 W·m^–1·K^–1 at 373 K, decreased by 23% compared with the thermal conductivity of HPS sample. Consequently, the <i>ZT</i> value of annealed sample is significantly higher than that of HPS sample. The maximum thermoelectric <i>ZT</i> of 0.99 is achieved for annealed sample with <i>x</i> =0.004 at 373 K. Furthermore, it is worthwhile to note that this annealed sample possesses a <i>ZT</i> value larger than 0.8 when the temperature is higher than 323 K.