Author:
Li Xiao-Na ,Nie Dong ,Dong Chuang ,Ma Teng-Cai ,Jin Xing ,Zhang Zhe ,
Abstract
Ｉｒｏｎ ｓｉｌｉｃｉｄｅｆｉｌｍｓｈａｖｅｂｅｅｎｓｙｎｔｈｅｓｉｚｅｄｂｙｍｅｔａｌｖａｐｏｒｖａｃｕｕｍａｒｃ (ＭＥＶＶＡ)ｉｏｎｉｍｐｌａｎｔａｔｉｏｎｏｆｉｒｏｎｉｎｔｏ (1 1 1 )ａｎｄ
(1 0 0 )ｏｒｉｅｎｔｅｄｓｉｌｉｃｏｎｗａｆｅｒｓ.Ｔｈｅｓｔｒｕｃｔｕｒｅｅｖｏｌｕｔｉｏｎｗａｓｃｈａｒａｃｔｅｒｉｚｅｄｕｓｉｎｇｔｒａｎｓｍｉｓｓｉｏｎｅｌｅｃｔｒｏｎｍｉｃｒｏｓｃｏｐｙ (ＴＥＭ)ａｎｄｈｉｇｈｒｅｓｏｌｕｔｉｏｎｅｌｅｃｔｒｏｎｍｉｃｒｏｓｃｏｐｙ (ＨＲＥＭ) .ＴｈｅβFeSi2ｆｉｌｍｓａｎｄｂｕｒｉｅｄｌａｙｅｒｓｗｉｔｈｄｉｆｆｅｒｅｎｔｄｅｐｔｈａｎｄｔｈｉｃｋｎｅｓｓｗｅｒｅｏｂｔａｉｎｅｄｂｙａｄｊｕｓｔｉｎｇｔｈｅｉｍｐｌａｎｔａｔｉｏｎｅｎｅｒｇｙａｎｄｄｏｓｅ .Ｔｈｅｆｏｒｍａｔｉｏｎｏｆα,β,γａｎｄＣｓＣｌ ＦｅＳｉ2 ｐｈａｓｅｓｈａｖｅｂｅｅｎｏｂｓｅｒｖｅｄ .ＴｈｅｐｈａｓｅｔｒａｎｓｉｔｉｏｎｏｒｄｅｒｉｓγFeSi2→βFeSi2→αFeSi2,CsClFeSi2→βFeSi2→αFeSi2 or βFeSi2→αFeSi2.Ａｎａｍｏｒｐｈｏｕｓｌａｙｅｒｗａｓｆｏｒｍｅｄａｔ60ｋＶａｎｄ 4× 1 0 1 7ｉｏｎｓ ｃｍ2 ,ｔｈｅｐｈａｓｅｔｒａｎｓｉｔｉｏｎｏｒｄｅｒｉｓａｍｏｒｐｈｏｕｓ→β ＦｅＳｉ2 →α ＦｅＳｉ2 .Ｔｈｅｍｏｒｐｈｏｌｏｇｙａｎｄｐｏｓｉｔｉｏｎｏｆｔｈｅｓｉｌｉｃｉｄｅｆｉｌｍｓｃｈａｎｇｅｗｉｔｈｔｈｅａｎｎｅａｌｉｎｇｔｅｍｐｅｒａｔｕｒｅ.Ｔｈｅｓｉｌｉｃｉｄｅｇｒａｉｎｓｇｒｏｗｗｉｔｈｉｎｃｒｅａｓｉｎｇａｎｎｅａｌｉｎｇｔｅｍｐｅｒａｔｕｒｅｗｉｔｈｆｕｒｔｈｅｒｉｎｃｒｅａｓｅｏｆｔｅｍｐｅｒａｔｕｒｅ ,ｔｈｅｃｏｎｔｉｎｕｏｕｓｓｉｌｉｃｉｄｅｌａｙｅｒｓｓｈｒｉｎｋｉｎｔｏｉｓｏｌａｔｅｄｉｓｌａｎｄｓａｎｄｔｈｅｉｎｔｅｒｆａｃｅβ ＦｅＳｉ2 Ｓｉｂｅ ｃｏｍｅｓｒｏｕｇｈｅｒ.Ｉｎｔｈｉｓｐａｐｅｒ,ｔｈｅｃｏｍｐｌｉｃａｔｅｄｏｒｉｅｎｔａｔｉｏｎｒｅｌａｔｉｏｎｓｈｉｐｓｅｘｉｓｔｉｎｇｂｅｔｗｅｅｎβ ＦｅＳｉ2 ａｎｄＳｉｗｅｒｅａｌｓｏｉｎｖｅｓｔｉｇａｔｅｄ
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
14 articles.
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