Author:
Tian Wei ,Wen Qi-Ye ,Chen Zhi ,Yang Qing-Hui ,Jing Yu-Lan ,Zhang Huai-Wu , ,
Abstract
In this paper, we present a broadband terahertz wave amplitude modulator based on optically-controlled gold-doped silicon. Gold dots with a diameter of 40 μm are used as a dopant source. Experimental results indicate that interstitial Au atoms provide effective recombination centers for photo-generated electron-hole pairs in Si body, leading to a significant decrease of the minority carrier lifetime from more than 10 μs to about 110 ns. Dynamic modulation measurement at 340 GHz carrier shows a modulation depth of 21% and a maximum modulation speed of 4.3 MHz. This modulator has advantages such as wideband operation, high modulation speed, polarization insensitivity, and easy manufacture by using the large-scale integrated technology, and thus can be widely used in terahertz technology.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Reference38 articles.
1. Tonouchi M 2007 Nat. Photon. 1 97
2. Federici J, Moeller L 2010 J. Appl. Phys. 107 111101
3. Mittleman D M, Gupta M, Neelamani R, Baraniuk R G, Rudd J V, Koch M 1999 Appl. Phys. B 68 1085
4. Siegel P H Microwave Symposium Digest 2004 IEEE MTT-S International 2004 1575
5. Kemp M C, Taday P F, Cole B E, Cluff J A, Fitzgerald A J, Tribe W R 2003 International Society for Optics and Photonics in AeroSense 2003 p44
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献