Poly-SiGe films prepared by metal-induced growth using UHVCVD system
-
Published:2006
Issue:7
Volume:55
Page:3756
-
ISSN:1000-3290
-
Container-title:Acta Physica Sinica
-
language:
-
Short-container-title:Acta Phys. Sin.
Author:
Wu Gui-Bin ,Ye Zhi-Zhen ,Zhao Xing ,Liu Guo-Jun ,Zhao Bin-Hui ,
Abstract
Poly-SiGe films were prepared by a metal-induced growth technique with ultrahigh vacuum chemical vapor deposition(UHVCVD) at low temperature. The crystal quality and morphology of poly-SiGe films were characterized by XRD and SEM. The influences of varying the thickness of Ni prelayer and the growth parameters on poly-SiGe films were investigated. It is shown that thicker Ni(≥10nm) has an obvious effect on poly-SiGe growth at 420—500℃. And for the samples with 60nm thick Ni layers, poly-SiGe deposition yields a continuous, highly crystalline film with good morphology.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy