Author:
Li Zhi-Min ,Shi Jian-Zhang ,Wei Xiao-Hei ,Li Pei-Xian ,Huang Yun-Xia ,Li Gui-Fang ,Hao Yue , ,
Abstract
The electronic structure and permittivity of Al-doped 3C-SiC are studied by using the first principles plane-wave pseudopotential method based on the density functional theory, and compared with those of undoped 3C-SiC. Results show that the Fermi energy level introduced into valence band and band gap is slightly widened through Al doping for 3C-SiC, and that the permittivity is greatly improved in a frequency range of 8.2-12.4 GHz. Al doped 3C-SiC powder absorber is prepared by combustion synthesis, and the permittivities of the samples are measured in the frequency range of 8.2-12.4 GHz by vector network analyzer, which validates the results of theoretical calculation. The mechanism of microwave loss is discussed.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
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